Silicon Carbide (SiC) Ceramics for Photovoltaic Manufacturing

High-performance Silicon Carbide (SiC) ceramics tailored for photovoltaic (PV) manufacturing processes—designed to enhance efficiency- да- да- да.reduce downtime- да.and ensure ultra-clean production. Our PV-grade SiC ceramics are engineered to withstand extreme high temperatures- да.resist corrosion- да.and maintain dimensional precision- да.making them the ideal replacement for traditional alumina- да.quartz- да.and metal components. Below are our core products- да.optimized for key PV processes including polysilicon purification- да.monocrystalline silicon growth- да.diffusion- да.sintering- да.and annealing.

1. RSiC Wafer Boat Rack for PV Diffusion Furnaces

Product Name: Recrystallized Silicon Carbide (RSiC) Wafer Boat Rack for PV Diffusion & SinteringCore Specifications:

• Материал: 1 High-purity Recrystallized Silicon Carbide (RSiC)- да.≥99.5% purity, <5ppm metal impurities

• Size Compatibility: 156mm×156mm, 210mm×210mm, 230mm+ large-size silicon wafers; customizable dimensions

• Temperature Resistance: Continuous use up to 1600°C, thermal shock resistance (no cracking under 50°C/min temperature change)

• Dimensional Tolerance: ±0.1mm, surface roughness Ra ≤0.8μm, no sharp edges or burrs

• Porosity: 15-25% open porosity (optimized for thermal shock absorption)

Key Benefits for PV Manufacturing: The RSiC wafer boat rack is the core carrier for silicon wafer high-temperature processing, ideal for diffusion, sintering, иannealing furnaces. Its ultra-high purity prevents silicon wafer contamination, while the porous structure ensures superior thermal shock resistance—reducing wafer breakage rates to below 0.3%. The grid-structured design accommodates batch processing, boosting production efficiency, and the wear-resistant surface maintains long-term dimensional accuracy, extending service life to 3-5 years (3x longer than quartz boats). Compatible with HJT, Topcon, and perovskite cell processes.Applications:PV diffusion furnaces, sintering furnaces, annealing furnaces, silicon wafer batch processing, high-efficiency solar cell manufacturing.

2. SiSiC Cantilever Arm for PV Furnaces

Product Name: Reaction-Bonded Silicon Carbide (SiSiC) Cantilever Arm for PV Diffusion & Sintering FurnacesCore Specifications:

• Материал: 1 Reaction-Bonded Silicon Carbide (SiSiC), 85-95% SiC content, 5-15% free silicon

• Dimensions: Length 500mm-2000mm, customizable; cross-section optimized for load-bearing

• Temperature Resistance: Continuous use up to 1350°C, suitable for medium-to-high temperature PV processes

• Mechanical Strength: Flexural strength 250-500 MPa, high load-bearing capacity at high temperatures

• Surface Quality: Precision-machined, smooth surface (Ra ≤0.8μm), no burrs

Key Benefits for PV Manufacturing: The SiSiC cantilever arm serves as the load-bearing and conveying component for silicon wafers in PV furnaces, ensuring stable positioning and uniform spacing between wafers during diffusion and sintering. Its high mechanical strength and low porosity prevent warpage and deformation, even under heavy loads, while the Химическая инертность avoids contamination of silicon wafers. The material’s excellent wear resistance reduces maintenance frequency, and itsdimensional precision (±0.1mm tolerance) ensures compatibility with automated PV production lines. Lightweight design reduces the load on furnace loading systems, supporting higher batch output.Applications:PV diffusion furnaces, sintering furnaces, automated silicon wafer conveying systems, high-efficiency solar cell production lines.

3. RSiC Furnace Tube for PV High-Temperature Processes

Product Name: Recrystallized Silicon Carbide (RSiC) Furnace Tube for PV Polysilicon Purification & Crystal GrowthCore Specifications:

• Material: Ultra-high purity RSiC, ≥99.9% purity, <1ppm metal impurities

• Structure: Single-layer (1000-1300°C) or double-layer (1300-1600°C) with vacuum interlayer for thermal insulation

• Dimensions: Length 1000-3000mm, wall thickness 10-30mm; customizable diameter and length

• Temperature Resistance: Continuous use up to 1600°C, thermal decomposition temperature >2700°C

• Surface: Polished inner wall, smooth finish to prevent silicon powder adhesion

Key Benefits for PV Manufacturing: The RSiC furnace tube forms the core reaction chamber for high-temperature PV processes, including polysilicon purification and monocrystalline silicon growth. Its ultra-high temperature resistance and oxidation stability (forms a dense SiO₂ protective film at high temperatures) prevent structural degradation, while the ultra-high purity ensures no contamination of molten silicon or process gases. The double-layer design enhances thermal insulation andtemperature uniformity (±1°C), improving the quality of polysilicon (up to 6N purity) and monocrystalline silicon growth yield. Service life is 3-5 times longer than traditional alumina or quartz furnace tubes, reducing maintenance costs and production downtime.Applications:Polysilicon purification furnaces, monocrystalline silicon growth furnaces, PV high-temperature diffusion furnaces, boron diffusion processes.

4. SiSiC Five-Sided Beam for PV Furnace Structures

Product Name: Reaction-Bonded Silicon Carbide (SiSiC) Five-Sided Beam for PV Furnace FramesCore Specifications:

• Material: High-strength SiSiC, 90-95% SiC content, low free silicon

• Dimensions: Length 1000-3000mm, customizable cross-section; five-sided structural design for maximum stability

• Mechanical Strength: Elastic modulus 300-360 GPa, high load-bearing capacity at high temperatures

• Temperature Resistance: Continuous use up to 1350°C, excellent dimensional stability at high temperatures

• Precision: Slot processing for seamless assembly with boat racks and furnace components

Key Benefits for PV Manufacturing: The SiSiC five-sided beam is the foundational load-bearing component of PV furnaces, supporting boat racks, cantilever arms, and other critical parts. Itsfive-sided design maximizes structural stability and material utilization, preventing deformation during long-term high-temperature operation. The high mechanical strength and wear resistance ensure durability, while the precise slot processing enables seamless integration with other furnace components. Suitable for large-scale PV furnaces handling 230mm+ silicon wafers, the beam’s dimensional stability reduces furnace vibration, improving processing consistency and wafer yield.Applications:PV diffusion furnaces, sintering furnaces, large-scale solar wafer processing furnaces, furnace structural frames.

5. RSiC Heating Plate for PV Sintering Furnaces

Product Name: Recrystallized Silicon Carbide (RSiC) Heating Plate for PV Solar Cell SinteringCore Specifications:

• Material:High-purity RSiC, ≥99.5% purity, excellent thermal conductivity (30-35 W/m·K)

• Dimensions: Disc or square shape, thickness 15-25mm; size matches furnace inner diameter (customizable)

• Temperature Performance: Heating rate >10°C/s, continuous use up to 1600°C, temperature uniformity ±2°C

• Surface: Coated with high-emissivity coating to improve heating efficiency

• Durability: Resistant to oxidation and corrosion, service life 3-5 years

Key Benefits for PV Manufacturing: The RSiC heating plate is the core heat-generating component of PV sintering furnaces, converting electrical energy into uniform thermal energy for solar cell ohmic contact formation (silver/aluminum paste sintering). Its high thermal conductivity ensures rapid, uniform heating, reducing production cycle time and energy consumption. The high-emissivity coating enhances heat transfer efficiency, while the ultra-high temperature resistance ensures stability in 700-900°C sintering processes. The plate’s Химическая инертность prevents reaction with sintering atmospheres, avoiding silicon wafer blackening and contamination, and its Длительный срок службы reduces maintenance and replacement costs.Applications:PV solar cell sintering furnaces, annealing furnaces, thermal processing equipment for high-efficiency solar cells.

6. SiC Wafer Carrier for PV Annealing Processes

Product Name: Silicon Carbide (SiSiC/RSiC) Wafer Carrier for PV Annealing & LPCVD ProcessesCore Specifications:

• Material: RSiC (for high-temperature annealing) or SiSiC (for medium-temperature annealing); ≥99.5% purity

• Compatibility: Suitable for 156mm to 260mm silicon wafers; modular design for easy stacking

• Temperature Resistance: RSiC variant up to 1600°C; SiSiC variant up to 1350°C

• Porosity: RSiC (15-25%); SiSiC (<0.5%, non-porous) for LPCVD processes

• Surface Quality: Smooth, non-adhesive surface to prevent silicon powder buildup and wafer scratching

Key Benefits for PV Manufacturing: The SiC wafer carrier is designed for PV annealing and LPCVD processes, ensuring stable wafer positioning and uniform thermal processing. The RSiC variant offers superior thermal shock resistance for rapid heating/cooling cycles, while the non-porous SiSiC variant is ideal for LPCVD processes, preventing gas leakage and silicon coating adhesion. The ultra-high purity eliminates contamination, improving solar cell conversion efficiency, and the modular design supports batch processing, boosting production throughput. The carrier’s wear resistance and easy cleaning reduce maintenance frequency, extending service life to 3-5 years.Applications:PV annealing furnaces, LPCVD processes, high-efficiency solar cell manufacturing, silicon wafer thermal processing.

7. RSiC Crucible for PV Polysilicon Melting

Product Name: Recrystallized Silicon Carbide (RSiC) Crucible for PV Polysilicon Melting & PurificationCore Specifications:

• Material:Ultra-high purity RSiC, ≥99.9% purity, <1ppm metal impurities

• Capacity: 5-50L, customizable for small-scale and large-scale polysilicon production

• Temperature Resistance: Continuous use up to 1600°C, withstands molten silicon (1410°C) without dissolution

• Structure: Dense RSiC with controlled porosity, high corrosion resistance to molten silicon

• Durability: No cracking or deformation during long-term melting cycles

Key Benefits for PV Manufacturing: The RSiC crucible is essential for polysilicon melting and purification in the upstream PV industry, providing an ultra-clean, high-temperature container for molten silicon. Its ultra-high purity ensures no contamination of polysilicon (meeting 6N electronic-grade standards), while its high-temperature resistance and corrosion resistance prevent crucible degradation and silicon contamination. The crucible’s structural stability reduces leakage risks, and its long service life (3-5 years) lowers replacement costs and production downtime, making it ideal for large-scale polysilicon manufacturing.Applications:Polysilicon melting furnaces, polysilicon purification processes, monocrystalline silicon growth (Czochralski method), PV upstream manufacturing.

General Product Advantages (All PV-Grade SiC Ceramics)

• Ultra-Clean Performance:High purity (≥99.5%) with ultra-low metal impurities, preventing silicon wafer contamination and improving solar cell conversion efficiency.

• Extreme Temperature Resistance:RSiC up to 1600°C, SiSiC up to 1350°C—ideal for all high-temperature PV processes.

• Superior Durability:Service life 3-5 years, 3-5x longer than traditional materials (alumina, quartz, metals), reducing maintenance and replacement costs.

• Thermal Shock Stability: RSiC’s porous structure and low thermal expansion coefficient (4.0-4.7×10⁻⁶/K) prevent cracking during rapid heating/cooling cycles.

• Химическая инертность: Resistant to acids, alkalis, high-purity gases, and molten silicon—suitable for harsh PV manufacturing environments.

• Customizable Design: All products can be tailored to specific PV furnace sizes, silicon wafer dimensions, and process requirements.

• Рентабельность с точки зрения затрат: Lower total cost of ownership (TCO) due to long service life, reduced downtime, and improved wafer yield.

Why Choose Our PV-Grade SiC Ceramics?

We specialize in high-performance SiC ceramics for the photovoltaic industry, with years of experience supplying top PV manufacturers worldwide. Our products are manufactured using advanced sintering and 3D printing technologies, ensuring consistent quality, precision, and reliability. We offer customized solutions, on-site technical support, and ISO 9001-certified quality control, ensuring our SiC ceramics perfectly match your PV production line requirements. Whether you need RSiC for high-temperature processes or SiSiC for precision structural parts, we deliver products that enhance efficiency, reduce costs, and support the development of high-efficiency solar energy.